onsemi NTB5605PG
$ 0.504
Obsolete
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Nicht autorisierte Händler
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Price @ 1000
$ 0.504
$ 2.127
Stock
161,069
455,537
Authorized Distributors
1
3
Mount
Surface Mount
-
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vds)
60 V
60 V
Continuous Drain Current (ID)
18.5 A
18.5 A
Threshold Voltage
-
-1.5 V
Rds On Max
140 mΩ
140 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
88 W
88 W
Input Capacitance
1.19 nF
1.19 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2009-03-31
LTD Date2009-09-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
Verwandte Teile
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MOSFET P-CH 55V 19A D2PAK "P-Channel 55 V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK"
InfineonIRF9Z34NSTRLPBF
MOSFET P-CH 55V 19A D2PAK "P-Channel 55 V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK"
InfineonIRF9Z34NSPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;D2Pak;PD 68W;VGS +/-20V;-55d
onsemiNTB18N06T4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 15A Tc 15A 48.4W 13ns
Beschreibungen
Beschreibungen von onsemi NTB5605PG, die von den Distributoren bereitgestellt werden.
Tube Surface Mount P-Channel Single Mosfet Transistor 18.5A Ta 18.5A 88W 75ns
Single P-Channel Power MOSFET -60V -18.5A 140 mΩ
Trans MOSFET P-CH 60V 18.5A 3-Pin(2+Tab) D2PAK Rail
P-Ch MOSFET 60V 20V 2V@250µA 22nC@5V 140mΩ@8.5A,5V 1.19nF@25V 88W(Tc) TO-263 SMD
Designed for high speed switching applications in power supplies converters PWM motor controls and other inductive loads this power MOSFET can withstand high energy in the avalanche and commutation modes. The avalanche energy rating is specified to eliminate the guesswork in designs where inductive loads are switched and to offer additional safety margin against unexpected voltage transients. The energy efficient design also offers a drain to source diode with fast recovery time.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)18.5 A
Current Rating-18.5 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.19 nF
Max Operating Temperature150 °C
Max Power Dissipation73.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation88 W
Rds On Max140 mΩ
Rise Time122 ns
Turn-Off Delay Time29 ns
Voltage Rating (DC)-60 V
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Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Compliance-Erklärungen