onsemi MURS320T3G
$ 0.259
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Min.
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Stock
10,749,316
1,928,871
1,928,871
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SMC
SMC
SMC
Forward Voltage
890 mV
710 mV
710 mV
Reverse Voltage (DC)
-
200 V
200 V
Average Rectified Current
3 A
3 A
3 A
Max Reverse Leakage Current
-
-
-
Reverse Recovery Time
35 ns
25 ns
25 ns
Lieferkette
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
VishayMURS320-E3/57T
DIODE, RECTIFIER, ULTRAFAST, VR 200V, IF 3A, PKG DO-214AB (SMC),VF 0.71V, TRR 35NS
VishayES3D-E3/57T
Rectifier Diode Switching 200V 3A 20ns 2-Pin SMC T/R / DIODE GEN PURP 200V 3A DO214AB
VishayES3B-E3/57T
DIODE, RECTIFIER, ULTRAFAST, VR 100V, IF 3A, PKG DO-214AB (SMC),VF 0.9V, TRR 20NS
Beschreibungen
Beschreibungen von onsemi MURS320T3G, die von den Distributoren bereitgestellt werden.
Rectifier Diode Switching 200V 4A 35ns 2-Pin SMC T/R / DIODE GEN PURP 200V 3A SMC
DIODE, RECTIFIER, ULTRAFAST, VR 200V, IF 4A, PKG SMC, VF 0.89V, TRR 35NS, TJ +175DEGC
SURFACE MOUNT ULTRAFAST POWER RECTIFIER Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon
MURS320T3G Series 200V 3 A Surface Mount Ultrafast Power Rectifier-DO-214AB, SMC
Power Rectifier, Ultra-Fast Recovery, 3 A, 200 V
DIODE, ULTRAFAST, 3A, 200V; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):3A; Diode Configuration:Single; Forward Voltage VF Max:890mV; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Ma
Fast Recovery Diode, Full Reel; Repetitive Peak Reverse Voltage:200V; Average Forward Current:3A; Diode Configuration:Single; Forward Voltage Max:890Mv; Reverse Recovery Time:35Ns; Forward Surge Current:100A; No. Of Pins:2 Pin Rohs Compliant: Yes |Onsemi MURS320T3G.
...employing state-of-the-art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage high frequency rectification or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
Reverse Repetitive Voltage Max. (Vrrm) V = 200 / Forward Current (If) A = 3 / Forward Voltage (Vf) mV = 890 / Reverse Current uA = 5 / Reverse Recovery Time (trr) ns = 35 / Peak Non-Repetitive Surge Current (Itsm) A = 100 / Configuration = Single / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 175 / Package Type = DO-214AB, SMC / Pins = 2 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260
DIODE, ULTRAFAST, 3A, 200V; Repetitive Reverse Voltage Vrrm Max: 200V; Forward Current If(AV): 3A; Diode Configuration: Single; Forward Voltage VF Max: 890mV; Reverse Recovery Time trr Max: 35ns; Forward Surge Current Ifsm Max: 100A; Operating Temperature Max: 175°C; Diode Case Style: DO-214AB; No. of Pins: 2 Pin; Product Range: MURS3 Series; Automotive Qualification Standard: AEC-Q101; SVHC: Lead (27-Jun-2018); Alternate Case Style: DO-214AB; Current Ifsm: 75A; Device Marking: MURS320T3; Diode Type: Fast Recovery; Forward Current If Max: 3A; Junction Temperature Tj Max: 175°C; No. of Pins: 2Pins; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Reverse Recovery Time trr Typ: 25ns
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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3-Monats-Trend: -2.57%
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Technische Spezifikationen
Physical
Case/PackageSMC
Contact PlatingTin
MountSurface Mount
Number of Pins2
Number of Terminals2
Technical
Average Rectified Current3 A
Breakdown Voltage200 V
Current Rating3 A
Element ConfigurationSingle
Forward Current3 A
Forward Voltage890 mV
Max Forward Surge Current (Ifsm)75 A
Max Operating Temperature175 °C
Max Output Current4 A
Max Repetitive Reverse Voltage (Vrrm)200 V
Max Reverse Voltage (DC)200 V
Max Surge Current75 A
Min Operating Temperature-65 °C
Number of Elements1
Output Current3 A
PackagingTape and Reel
Peak Non-Repetitive Surge Current100 A
Peak Reverse Current5 µA
PolarityStandard
Recovery Time35 ns
Reverse Recovery Time35 ns
Reverse Standoff Voltage200 V
Reverse Voltage200 V
Schedule B8541100080
TerminationSMD/SMT
Voltage Rating (DC)200 V
Dimensions
Height2.13 mm
Length6.86 mm
Width5.84 mm
Datenblätter und Dokumente
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Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen