onsemi MUN5333DW1T1G

Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
$ 0.072
Production
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Datenblätter und Dokumente

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IHS

Datasheet13 SeitenVor 5 Jahren

Master Electronics

onsemi

Newark

element14 APAC

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
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onsemiMUN5235DW1T1G
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R / TRANS 2NPN PREBIAS 0.25W SOT363
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onsemiMUN5236DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
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Beschreibungen

Beschreibungen von onsemi MUN5333DW1T1G, die von den Distributoren bereitgestellt werden.

Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Verical
MUN Series 50 V 100 mA 4.7 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
Future Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
IHS
80@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
Dasenic
Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
Digi-ic_SMART PIONEER
Complementary Bipolar Digital Transistor (BRT)
onsemi
TRANS, NPN/PNP, 4.7K/47K, SOT-363-6; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Farnell
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
North Star Micro

Bilder

Augswan
element14
Farnell
RS
element14 APAC
TME
Micros
Rochester Electronics

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  • ON Semiconductor Corporation
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  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd