onsemi MMUN2232LT1G
$ 0.038
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMUN2232LT1G | 1.374.000 | 3K | Tape & Reel | ||||||||
| Avnet | MMUN2232LT1G | 1.278.000 | 3K | 4d | ||||||||
| Newark | MMUN2232LT1G | 476 | 1 | Cut Tape | ||||||||
| Verical | MMUN2232LT1G | 2.370.000 | 30K | |||||||||
| Arrow Electronics | MMUN2232LT1G | 12.135 | 1 |
Bestandsverlauf
3-Monats-Trend: -11.31%
CAD-Modelle
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Alternative Teile
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Datenblätter und Dokumente
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CAD-Modelle
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
onsemiMMUN2211LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
onsemiMMUN2213LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
onsemiMMUN2212LT1G
Bipolar Transistors (BJT); MMUN2212LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
Diodes Inc.DDTC143ECA-7-F
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm
Diodes Inc.DDTC114ECA-7-F
DDTC114CA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3
Diodes Inc.DDTC114YCA-7-F
DDTC114YCA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3
Beschreibungen
Beschreibungen von onsemi MMUN2232LT1G, die von den Distributoren bereitgestellt werden.
Bipolar Transistors (BJT); MMUN2232LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23-3
R1 = 4.7 KILO OHM, R2 = 4.7 KILO OHM DIGITAL NPN TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMUN2232LT1G NPN DIGITAL TRANSISTOR,100 MA 50V 4.7 KOHMS, RATIO OF 1,3-PIN SOT-23
15@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
250mV@ 1mA,10mA NPN - Pre-Biased 400mW 5V 500nA 50V 50V 100mA SOT-23-3,TO-236 2.9mm*1.3mm*1mm
NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:4.7Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2232LT1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -11.31%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
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Technische Spezifikationen
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min15
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation400 mW
Schedule B8541100050
Voltage Rating (DC)50 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi MMUN2232LT1G herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen