onsemi MMUN2213LT1G
$ 0.038
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MMUN2213LT1G | 3.000 | 48K | 2d | ||||||||
| Newark | MMUN2213LT1G | 1.901 | 5 | Cut Tape | ||||||||
| Verical | MMUN2213LT1G | 49.944 | 121 | |||||||||
| Arrow Electronics | MMUN2213LT1G | 1.712.900 | 1 | |||||||||
| Future Electronics | MMUN2213LT1G | 39.000 | 3K | Tape & Reel |
Bestandsverlauf
3-Monats-Trend: -33.20%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi MMUN2213LT1G herunter.
CAD-Modelle
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Price @ 1000
$ 0.038
$ 0.033
$ 0.033
Stock
5,272,284
511,929
511,929
Authorized Distributors
6
2
2
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
-
-
hFE Min
80
80
80
Power Dissipation
246 mW
200 mW
200 mW
Lieferkette
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
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onsemiMMUN2212LT1G
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TRANS PREBIAS NPN 200MW SOT23-3 / Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R
Diodes Inc.DDTC123JCA-7-F
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R / TRANS PREBIAS NPN 200MW SOT23-3
Beschreibungen
Beschreibungen von onsemi MMUN2213LT1G, die von den Distributoren bereitgestellt werden.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMUN Series 50 V 100 mA 47 kOhm NPN Silicon Bias Resistor Transistor - SOT-23
MMUN2213LT1G NPN DIGI TRANSISTOR, 100MA 50 V 47 KOHM, RATIO OF 1, 3-PIN SOT-23
80@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
Bias Resistor Transistor, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:47Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2213LT1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -33.20%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation246 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi MMUN2213LT1G herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen