onsemi ISL9R30120G2

Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247
Obsolete
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DistributorSKUMinPkg
AvnetISL9R30120G21.3071
2d
Flip ElectronicsISL9R30120G21.307
>1wk
Worldway ElectronicsISL9R30120G221.1807Tube
21h
Chipsmall LimitedISL9R30120G2300.0001
20h
Shenzhen Glow Technology Co., Ltd506600Kontakt10
>1w

Datenblätter und Dokumente

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onsemi

Datasheet8 SeitenVor 6 Jahren
Datasheet0 SeitenVor 0 Jahren
Datasheet0 SeitenVor 0 Jahren

Newark

IHS

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Farnell

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2002-06-04
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Beschreibungen

Beschreibungen von onsemi ISL9R30120G2, die von den Distributoren bereitgestellt werden.

Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247
IHS
Rectifier Diode Switching 1.2KV 30A 100ns 2-Pin(2+Tab) TO-247 Tube
Verical
ISL9R30120 Series 1200 V 30 A 166 W Stealth Diode - TO-247
Future Electronics
BRIDGE RECTIFIER, 30A, 1200V, TO247; Diode Type:Fast Recovery; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):30A; Forward Voltage VF Max:3.3V; Reverse Recovery Time trr Max:100ns; Forward Surge Current Ifsm Max:325A; Operating Temperature Range:-55°C to +150°C; Diode Case Style:TO-247; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); No. of Phases:Single; Package / Case:TO-247; Termination Type:Through Hole
element14 APAC
The ISL9R30120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Fairchild Semiconductor

Bilder

Newark
Farnell
LZChips
Rochester Electronics
Future Electronics
Newark

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Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • ISL9R30120G2.
  • ISL9R30120G2..