onsemi HGTP3N60A4D

Trans IGBT Chip N-CH 600V 17A 3-Pin (3+Tab) TO-220AB Rail
$ 1.451
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
Verical
3
HGTP3N60A4D2.360193
Rochester ElectronicsHGTP3N60A4D25.328
14h
AvnetHGTP3N60A4D0400
16h
Win SourceWS-HGTP3N60A4D3518
15h
Worldway ElectronicsHGTP3N60A4D23.1287
14h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi HGTP3N60A4D herunter.

IHS

Datasheet0 SeitenVor 0 Jahren
Datasheet0 SeitenVor 0 Jahren

onsemi

Arrow Electronics

Fairchild Semiconductor

Farnell

Bestandsverlauf

3-Monats-Trend:
+0.00%
Powered bySpectra logo

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16

Verwandte Teile

STMicroelectronicsSTGF19NC60KD
Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220FP Tube
Details
onsemiSGS10N60RUFDTU
Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F
Details
onsemiFGPF10N60UNDF
Trans IGBT Chip N-CH 600V 20A 42000mW 3-Pin(3+Tab) TO-220FP Tube
Details
onsemiSGP10N60RUFDTU
Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail
Details
InfineonIRG4IBC30UDPBF
N-Channel 600 V 17 A Flange Mount Ultrafast CoPack IGBT - TO-220FP
Details
InfineonIRG4IBC20FDPBF
Trans IGBT Chip N-CH 600V 14.3A 3-Pin(3+Tab) TO-220 Full-Pak
Details

Beschreibungen

Beschreibungen von onsemi HGTP3N60A4D, die von den Distributoren bereitgestellt werden.

Trans IGBT Chip N-CH 600V 17A 3-Pin (3+Tab) TO-220AB Rail
Verical
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:17A; Voltage, Vce Sat Max:2.7V; Power Dissipation:70W; Case Style:TO-220AB; Termination Type:Through Hole; Alternate Case Style:TO-263; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Power, Pd:70W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:47ns; Time, Fall Typ:47ns; Time, Rise:11ns; Transistors, No. of:1
Farnell
The HGTP3N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Fairchild Semiconductor

Bilder

Farnell
Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd