onsemi H11AG1M
$ 0.525
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -43.76%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2007-06-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Beschreibungen
Beschreibungen von onsemi H11AG1M, die von den Distributoren bereitgestellt werden.
6-PIN DIP PHOTOTRANSISTOR OPTOCOUPLER Transistor Output Optocoupler, 1-Element, 7500V Isolation
Single Channel 4170 Vrms Through Hole Phototransistor Optocoupler - DIP-6
The H11AG1M series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -43.76%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageDIP
Contact PlatingTin
MountThrough Hole
Number of Pins6
Weight855 mg
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)400 mV
Current Transfer Ratio300 %
Dark Current10 µA
Fall Time5 µs
Forward Current50 mA
Forward Voltage1.5 V
Isolation Voltage7500 Vrms
Max Collector Current50 mA
Max Input Current50 mA
Max Operating Temperature100 °C
Max Output Voltage30 V
Max Power Dissipation260 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Output Current per Channel50 mA
PackagingBulk
Power Dissipation260 mW
Reverse Breakdown Voltage6 V
Rise Time5 µs
Schedule B8541408000
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen