onsemi FQS4901TF

Name: onsemi FQS4901TF
Brand: onsemi
SKU: FQS4901TF

Transistor MOSFET Array Dual N-CH 400V 1.8A 8-Pin SOIC T/R

$ 0.76

EOL

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		FQS4901TF	0	10	Bulk		0,820	0,760	0,760	0,760	10h
element14 APAC	2	FQS4901TF	0	1	Cut Tape	1,412*	1,184*	1,049*	0,780*	0,732*	7h
Farnell	2	FQS4901TF	0	1	Cut Tape	2,100*	1,677*	1,677*	1,677*	1,677*	17h
Win Source		WS-FQS4901TF	21.000	4			12,833	10,427	10,427	10,427	18h
Worldway Electronics		FQS4901TF	27.597	7	Tape & Reel		0,243	0,235	0,223	0,223	17h

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Technical Drawing1 SeiteVor 6 Jahren

IHS

Fairchild Semiconductor

Future Electronics

onsemi

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Lieferkette

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-17

Lifecycle StatusEOL (Last Updated: 5 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

Beschreibungen

Beschreibungen von onsemi FQS4901TF, die von den Distributoren bereitgestellt werden.

Transistor MOSFET Array Dual N-CH 400V 1.8A 8-Pin SOIC T/R

Avnet Japan

N-Channel 400 V 4.2 Ohm Surface Mount Mosfet - SOIC-8

Future Electronics

TRANSISTOR, N-CHANNEL, QFET MOSFET, 400V, 0.45A, 4.2 OHM AT VGS 10V

RS (Formerly Allied Electronics)

N-Channel QFET® MOSFET 400V, 0.45A, 4.2Ω

onsemi

MOSFET, DUAL N CH, 400V, 0.45A, SOP-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 450mA; Drain Source Voltage Vds: 400V; On Resistance Rds(o; Available until stocks are exhausted Alternative available

Farnell

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:0.45A; On Resistance, Rds(on):4.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

Newark

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

N CHANNEL MOSFET, 400V, SOIC; Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:450mA; Drain Source Voltage Vds:400V; On Resistance Rds(on):4.2ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:450mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:1.8A; Termination Type:SMD; Voltage Vds:400V; Voltage Vgs Max:25V; Voltage Vgs th Max:4V

element14 APAC

Bilder

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

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Technische Spezifikationen

Physical

Case/PackageSOP

MountSurface Mount

Number of Pins8

Number of Terminals8

Weight230.4 mg

Technical

Continuous Drain Current (ID)450 mA

Current Rating450 mA

Drain to Source Breakdown Voltage400 V

Drain to Source Resistance4.2 Ω

Drain to Source Voltage (Vdss)400 V

Element ConfigurationDual

Fall Time35 ns

Gate to Source Voltage (Vgs)25 V

Input Capacitance210 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation2 W

Min Breakdown Voltage400 V

Min Operating Temperature-55 °C

Number of Channels2

Number of Elements2

Power Dissipation2 W

Rds On Max4.2 Ω

Resistance4.2 Ω

Rise Time20 ns

Schedule B8541290080

Threshold Voltage4 V

Turn-Off Delay Time20 ns

Turn-On Delay Time5 ns

Voltage Rating (DC)400 V

Dimensions

Height1.75 mm