onsemi FQPF6N80C
$ 1.226
EOL
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -4.04%
CAD-Modelle
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-18
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 weeks ago)
Verwandte Teile
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N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP5NK80ZFP
N-channel 800 V, 1.9 Ohm, 4.3 A, Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
Beschreibungen
Beschreibungen von onsemi FQPF6N80C, die von den Distributoren bereitgestellt werden.
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F
N-Channel 800 V 2.5 Ohm Flange Mount Mosfet - TO-220F
800V 5.5A 2.5´Î@10V2.75A 51W 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.3A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.95ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -4.04%
CAD-Modelle
0 Modelle verfügbar
Alternative Teile
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Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vds)800 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.31 nF
Max Operating Temperature150 °C
Max Power Dissipation51 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation51 W
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time65 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time47 ns
Turn-On Delay Time26 ns
Voltage Rating (DC)800 V
Dimensions
Height9.19 mm
Length10.16 mm
Width4.7 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance-Erklärungen