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Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
Verwandte Teile
STMicroelectronicsSTP6NK60ZFP
N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP5NK60ZFP
N-CHANNEL 600V - 1.2 Ohm - 5A TO-220FP Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronicsSTP4NK60ZFP
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in TO-220FP
Beschreibungen
Beschreibungen von onsemi FQPF6N60C, die von den Distributoren bereitgestellt werden.
MOSFET N-CH 600V 5.5A TO-220F
Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.5A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:22A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild.s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance810 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation40 W
Rds On Max2 Ω
Resistance2 Ω
Rise Time45 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)600 V
Dimensions
Height9.19 mm
Length10.16 mm
Width4.7 mm