onsemi FDPF5N60NZ

N-Channel Power MOSFET, UniFETTM II, 600V, 4.5A, 2Ω, TO-220F
$ 0.834
EOL
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DistributorSKUMinPkg
VericalFDPF5N60NZ2.500337
Rochester ElectronicsFDPF5N60NZ2.500
2h
Worldway ElectronicsFDPF5N60NZ11.1997Tube
2h
LCSCC33016711
12h
RC ElectronicsFDPF5N60NZ60.8261
>1wk

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-11
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi FDPF5N60NZ, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, UniFETTM II, 600V, 4.5A, 2Ω, TO-220F
onsemi
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220FP Tube
Verical
600 V, 4.5 A, 2.0 OHM N-CHANNEL MOSFET Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
MOSFET,N CH,600V,4.5A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.65ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
Farnell
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Fairchild Semiconductor

Bilder

Farnell
Farnell
South Microelectronics
Future Electronics
Conrad
LZChips
Rochester Electronics

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