onsemi FQP13N50

N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220
$ 1.17
EOL
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DistributorSKUMinPkg
Rochester ElectronicsFQP13N5038
6h
Farnell
2
FQP13N5001
1d
element14 APACFQP13N5001
20h
Win SourceWS-FQP13N505.18724
7h
Worldway ElectronicsFQP13N5025.5787Tube
6h

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IHS

Datasheet8 SeitenVor 12 Jahren

element14 APAC

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-23
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-06-21
LTD Date2022-12-21
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi FQP13N50, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220
onsemi
Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220AB Rail
Avnet
N-Channel 500 V 0.43 O Flange Muont Mosfet - TO-220
Future Electronics
Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):430mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:170W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:12.5A; On State Resistance Max:430mohm; Package / Case:TO-220; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:50A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
element14 APAC
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Bilder

element14 APAC
TME
Farnell
iiiC
Future Electronics
Conrad
Rochester Electronics

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Aliasnamen für Teilnummern

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  • FQP13N50.