onsemi FQP10N60C
$ 1.294
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
Beschreibungen
Beschreibungen von onsemi FQP10N60C, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 600V 9.5A 3-Pin (3+Tab) TO-220 Rail
N-Channel QFET® MOSFET 600V, 9.5A, 730mΩ
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:9.5A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:38A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:156W; Power, Pd:156W; Resistance, Rds on Max:0.73ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:600V; Voltage, Vgs th Max:4V; Width, External:10.67mm
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: Restocked
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)9.5 A
Current Rating9.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance730 mΩ
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.04 nF
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation156 W
Rds On Max730 mΩ
Resistance730 mΩ
Rise Time69 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time144 ns
Turn-On Delay Time23 ns
Voltage Rating (DC)600 V
Dimensions
Height8.79 mm
Length10.36 mm