onsemi FQD3P50TM

Name: onsemi FQD3P50TM
Brand: onsemi
SKU: FQD3P50TM

P-channel Power Mosfet, Qfet®, -500 V, -2.1 A, 4.9 Ω, Dpak

$ 0.574

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Distributor		SKU		Min	Pkg
Avnet	2	FQD3P50TM	187.500	2500						0,549	2d
Newark	2	FQD3P50TM	2.416	1	Cut Tape	0,468	0,468	0,468	0,468	0,468
Verical	3	FQD3P50TM	5.050	100				1,386	0,612	0,555
Arrow Electronics		FQD3P50TM	1.690	1		1,011	0,841	0,694	0,574	0,574
Master Electronics		FQD3P50TM	5.050	50				0,979	0,461	0,453

Bestandsverlauf

3-Monats-Trend: -25.13%

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JRH Electronics

Datasheet8 SeitenVor 6 Jahren

IHS

Upverter

onsemi

Fairchild Semiconductor

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3-Monats-Trend:

-25.13%

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Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-10-18

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi FQD3P50TM, die von den Distributoren bereitgestellt werden.

P-Channel Power MOSFET, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK

onsemi

TRANSISTOR,MOSFET,P-CHANNEL,500V V(BR)DSS,2.1A I(D),TO-252AA

Newark

In a Pack of 10, FQD3P50TM P-Channel MOSFET, 1.33 A, 500 V QFET, 3-Pin DPAK ON Semiconductor

Fly-Wing Technology

Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 500V 2.1A DPAK

Win Source

Power MOSFET, P Channel, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Surface Mount

Avnet

Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.1 / Drain-Source Voltage (Vds) V = -500 / ON Resistance (Rds(on)) Ohm = 4.9 / Gate-Source Voltage V = 30 / Fall Time ns = 45 / Rise Time ns = 56 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 50

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Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

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3-Monats-Trend: -25.13%

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Technische Spezifikationen

Physical

Case/PackageDPAK

MountSurface Mount

Number of Pins3

Number of Terminals2

Technical

Continuous Drain Current (ID)2.1 A

Current18 A

Current Rating-2.1 A

Drain to Source Breakdown Voltage-500 V

Drain to Source Resistance4.9 Ω

Drain to Source Voltage (Vdss)-500 V

Element ConfigurationSingle

Fall Time45 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance660 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation50 W

Min Breakdown Voltage500 V

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

Power Dissipation2.5 W

Rds On Max4.9 Ω

Resistance4.9 Ω

Rise Time56 ns

Schedule B8541290080

Threshold Voltage-5 V

Turn-Off Delay Time35 ns

Turn-On Delay Time12 ns

Voltage400 V

Voltage Rating (DC)-500 V

Dimensions

Height2.517 mm

Length6.73 mm

Width6.22 mm