onsemi FQB5N50CTM

Name: onsemi FQB5N50CTM
Brand: onsemi
SKU: FQB5N50CTM

N-Channel Power MOSFET, QFET®, 500 V, 5 A, 1.4 Ω, D2PAK

$ 0.742

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Distributor		SKU		Min	Pkg
Rochester Electronics		FQB5N50CTM	54					0,894	0,742	0,662	22h
Farnell	2	FQB5N50CTM	0	1	Cut Tape	2,232*	1,909*	1,627*	1,340*	1,340*	22h
element14 APAC	2	FQB5N50CTM	0	1	Cut Tape	1,882*	1,492*	1,265*	0,922*	0,883*	12h
Component Stockers USA		FQB5N50CTM	826			0,780	0,780	0,730	0,730	0,730	>1wk
Win Source		WS-FQB5N50CTM	382	7			8,759	5,839	5,839	5,839	23h

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Technical Drawing1 SeiteVor 5 Jahren

Farnell

IHS

onsemi

Future Electronics

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Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-10-01

Lifecycle StatusEOL (Last Updated: 5 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

Beschreibungen

Beschreibungen von onsemi FQB5N50CTM, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, QFET®, 500 V, 5 A, 1.4 Ω, D2PAK

onsemi

Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK T/R

Avnet

N-Channel 500 V 5 A 1.4 O Surface Mount QFET® Mosfet - TO-263

Future Electronics

500 V, 5 A, 1.4 OHM N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N-CH, 500V, 5A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

Bilder

Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

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Technische Spezifikationen

Physical

Case/PackageD2PAK

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight1.31247 g

Technical

Continuous Drain Current (ID)5 A

Current Rating5 A

Drain to Source Breakdown Voltage500 V

Drain to Source Resistance1.4 Ω

Drain to Source Voltage (Vdss)500 V

Element ConfigurationSingle

Fall Time48 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance625 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation73 W

Min Breakdown Voltage500 V

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

Power Dissipation73 W

Rds On Max1.4 Ω

Rise Time46 ns

Schedule B8541290080

Threshold Voltage4 V

Turn-Off Delay Time50 ns

Turn-On Delay Time12 ns

Voltage Rating (DC)500 V

Dimensions

Height5.08 mm

Length10.67 mm

Width9.65 mm