onsemi FQA170N06

N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P
$ 3.791
EOL
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VericalFQA170N0625076
Rochester ElectronicsFQA170N06250
5h
FarnellFQA170N06.01
4h
Microchip USAFQA170N06276600Tray
21h
Win SourceWS-FQA170N0642.9009
5h

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IHS

Datasheet8 SeitenVor 12 Jahren
Datasheet0 SeitenVor 0 Jahren

onsemi

Fairchild Semiconductor

Farnell

Newark

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-13
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Beschreibungen

Beschreibungen von onsemi FQA170N06, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P
onsemi
Trans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3P(N) Rail
Avnet
N-Channel 60 V 5.6 mOhm Through Hole Mosfet - TO-3PN
Future Electronics
FAIRCHILD SEMICONDUCTORFQA170N06N CHANNEL MOSFET, 60V, 170A, TO-3PN
Jak Electronics
Power Field-Effect Transistor, 170A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
FQA170N06 - POWER MOSFET, N-CHAN
DigiKey Marketplace
60V 170A 4.5´Î@10V85A 375W 4V@250uA 620pF@25V N Channel 7.2nF@25V 220nC@10V -55¡Í~+175¡Í@(Tj) TO-3 MOSFETs ROHS
Dasenic
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
element14 APAC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Fairchild Semiconductor

Bilder

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iiiC
Farnell
Newark
Conrad
UTSource
Future Electronics

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