onsemi FOD817ASD
$ 0.137
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -6.01%
CAD-Modelle
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CAD-Modelle
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Price @ 1000
$ 0.137
$ 0.172
Stock
9,407,972
308,569
Authorized Distributors
6
6
Case/Package
SMD/SMT
SMD/SMT
Number of Pins
4
4
Number of Channels
1
1
Isolation Voltage
5000 Vrms
5000 Vrms
Current Transfer Ratio
80 %
80 %
Rise Time
18 µs
18 µs
Fall Time
18 µs
18 µs
Output Voltage
70 V
70 V
Output Current
-
-
Forward Voltage
1.4 V
1.4 V
Forward Current
50 mA
50 mA
Lieferkette
Country of OriginThailand
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2004-04-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
Diodes Inc.LTV-816S-TA1
LTV Series Single Channel 80 V 5000 Vrms Transistor Output Optocoupler SMT-DIP-4
California Eastern LaboratoriesPS2501AL-1-F3-W-A
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD Embossed T/R
California Eastern LaboratoriesPS2501AL-1-F3-A
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD T/R
Beschreibungen
Beschreibungen von onsemi FOD817ASD, die von den Distributoren bereitgestellt werden.
Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 4 Pins, 50 mA, 5 kV, 80 %
Phototransistor Optocoupler Transistor Output Optocoupler, 1-Element, 5000V Isolation
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD Black T/R
Avnet Japan
Optocoupler DC Input 1 Channel Trans DC Output 4-Pin Plastic Dip SMD Black Tape and Reel
FOD817 Series Single Channel 70 V 5000 Vrms Phototransistor Optocoupler - DIP-4
Transistor Output Optocouplers Opto Phototransistor Output SM-DIP4
OPTOCOUPLER, PHOTOTRANSISTOR O/P, 5KV, SMD-4, FULL REEL; No. of Channels:1; Isolation Voltage:5kV; Optocoupler Output Type:Phototransistor; Input Current:50mA; Output Voltage:70V; Opto Case Style:SMD; No. of Pins:4
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 50 / Power Dissipation (Pd) mW = 150 / Reverse Voltage (Vr) V = 6 / Package Type = DIP-4 / Collector-Emitter Saturation Voltage Max. mV = 200 / Emitter−Collector Voltage (VECO) Max. V = 6 / Forward Voltage (Vf) Max. V = 1.4 / Output Type = Phototransistor / Isolation Voltage kV = 5 / Forward Current (If) Max. mA = 50 / Current Transfer Ratio (CTR) Min. % = 80 / Operating Temperature Max. °C = 110 / Operating Temperature Min. °C = -55 / Current Transfer Ratio (CTR) Max. % = 160 / Channels = 1
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -6.01%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageSMD/SMT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Weight0 g
Technical
Collector Emitter Breakdown Voltage70 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)70 V
Current Transfer Ratio80 %
Dark Current100 nA
Fall Time18 µs
Forward Current50 mA
Forward Voltage1.4 V
Input Current50 mA
Isolation Voltage5000 Vrms
Max Collector Current50 mA
Max Input Current50 mA
Max Junction Temperature (Tj)125 °C
Max Operating Temperature110 °C
Max Output Voltage70 V
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output Current per Channel50 mA
Output Voltage70 V
PackagingBox
Power Dissipation200 mW
Reverse Breakdown Voltage6 V
Reverse Voltage6 V
Rise Time18 µs
Schedule B8541408000
Dimensions
Height3.85 mm
Length5.1 mm
Width7 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen