onsemi FJAFS1720TU

Power Bipolar Transistor, 12A I(C), 1-Element, NPN

Trans GP BJT NPN 800V 12A 60000mW 3-Pin(3+Tab) TO-3PF Rail

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

The FJAFS1720 is a low-cost, high performance power switch designed to provide the best performance when used in an ESBC ™ configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1700 V and up to 12amps while providing exceptionally low on-resistance and very low switching losses. The ESBC ™ switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBC ™ MOSFET is a low-voltage, low-cost, surface mount device that combines low-input capacitance and fast switching, The ESBC ™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJAFS1720 provides exceptional reliability and a large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-3PF package.