onsemi FGD3N60UNDF
$ 0.611
EOL
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FGD3N60UNDF | 2.157 | 459 | |||||||||
| Rochester Electronics | FGD3N60UNDF | 2.157 | 4h | |||||||||
| Farnell | FGD3N60UNDF | 0 | 1 | Cut Tape | 1d | |||||||
| Microchip USA | FGD3N60UNDF | 134 | 3500 | 20h | ||||||||
| Component Stockers USA | FGD3N60UNDF | 14.334 | 18h |
Bestandsverlauf
3-Monats-Trend: +0.00%
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-01-19
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Verwandte Teile
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Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
onsemiSGR6N60UFTM
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
onsemiSGR6N60UFTF
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
STMicroelectronicsSTGD3NB60SDT4
Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R
InfineonIRGR3B60KD2TRP
52W 7.8A 600V NPT (non-penetrating type) DPAK IGBT Transistors / Modules ROHS
Beschreibungen
Beschreibungen von onsemi FGD3N60UNDF, die von den Distributoren bereitgestellt werden.
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
IGBT, 600V, 3A, Short Circuit Rated
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
晶体管, IGBT, 600V, 6A, 150度 C, 60W;
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: +0.00%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
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Technische Spezifikationen
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.4 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current6 A
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation60 W
Reverse Recovery Time21 ns
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen