onsemi FGA25S125P

Trans IGBT Chip N-CH 1.25KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
Obsolete
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DistributorSKUMinPkg
Microchip USAFGA25S125P420600Tray
6d
Win SourceWS-FGA25S125P8.69060
8h
Worldway ElectronicsFGA25S125P29.6797Tube
7h
AnlinkdaFGA25S125P13.288
13h
RC ElectronicsFGA25S125P11.9261
2d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi FGA25S125P herunter.

IHS

Datasheet8 SeitenVor 12 Jahren

onsemi

Fairchild Semiconductor

Lieferkette

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Verwandte Teile

STMicroelectronicsSTGWT20IH125DF
1250 V, 20 A IH series trench gate field-stop IGBT
Details
onsemiFGA20S125P
Trans IGBT Chip N-CH 1.25KV 40A 3-Pin(3+Tab) TO-3P(N) T/R
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onsemiFGA25N120ANTDTU
Trans IGBT Chip N=-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail
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onsemiHGTP10N120BN
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
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onsemiHGTG11N120CN
Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
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InfineonIHW20N135R5XKSA1
1350 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
Details

Beschreibungen

Beschreibungen von onsemi FGA25S125P, die von den Distributoren bereitgestellt werden.

Trans IGBT Chip N-CH 1.25KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
Avnet
1250V, 25A, Shorted-anode IGBT
onsemi
Insulated Gate Bipolar Transistor, 50A I(C), 1250V V(BR)CES, N-Channel
IHS
RAIL / 1250V 25A FS SA Trench IGBT
Newark
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
Fairchild Semiconductor

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