onsemi FFP08S60SNTU

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
$ 1.026
Obsolete
HerstellerseiteDatenblatt

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DistributorSKUMinPkg
AvnetFFP08S60SNTU1.000658
3d
Flip ElectronicsFFP08S60SNTU1.000
5d
Component Stockers USAFFP08S60SNTU28.045
>1wk
Win SourceWS-FFP08S60SNTU7.60050
9h
Worldway ElectronicsFFP08S60SNTU24.5277Tube
8h

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IHS

Datasheet5 SeitenVor 21 Jahren
Datasheet0 SeitenVor 0 Jahren

onsemi

Fairchild Semiconductor

Newark

Farnell

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2008-05-12
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

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Beschreibungen

Beschreibungen von onsemi FFP08S60SNTU, die von den Distributoren bereitgestellt werden.

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
IHS
Diode Switching 600V 8A 2-Pin(2+Tab) TO-220 Rail
Verical
DIODE, RECTIFIER, 600V, 8A, TO-220; Diode Type:Ultrafast; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Forward Voltage VF Max:3.4V; Reverse Recovery Time trr Max:25ns; Forward Surge Current Ifsm Max:60A; Operating Temperature Range:-65°C to +150°C; Diode Case Style:TO-220; No. of Pins:2; MSL:MSL 1 - Unlimited
Farnell
The FFP08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Fairchild Semiconductor

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element14 APAC
iiiC
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