onsemi FDS6688

Trans Mosfet N-ch 30V 16A 8-PIN SOIC T/r
$ 1.181
Obsolete
Datenblatt

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DistributorSKUMinPkg
Verical
4
FDS66881.008239
Rochester ElectronicsFDS668820.427
6h
Win SourceWS-FDS668818.30045
6h
ICPartonlineFDS668822.846
>1wk
Worldway ElectronicsFDS66887.3287Bulk
5h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi FDS6688 herunter.

IHS

Datasheet5 SeitenVor 22 Jahren

element14

Farnell

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-06-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-03-15
LTD Date2010-09-15

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Beschreibungen

Beschreibungen von onsemi FDS6688, die von den Distributoren bereitgestellt werden.

Trans MOSFET N-CH 30V 16A 8-Pin SOIC T/R
Verical
N-Channel PowerTrenchO MOSFET 30V 16A Rds(on)=6~7mΩ SO8
ACDS
Small Signal Field-Effect Transistor, 16A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
30V/16V, 6/7MO, NCH, SINGLE, SO8, 400A GOX, PTIII
Onlinecomponents.com
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):0.006ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: No
Newark
MOSFET, N, SMD, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:0.006ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:50A; No. of Pins:8; Power Dissipation:2.5mW; Transistors, No. of:1; Voltage, Vds Max:30V
Farnell

Bilder

Newark
element14
Rochester Electronics

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