onsemi FDP18N20F

N-Channel Power MOSFET, UniFETTM, FRFET®, 200 V, 18 A, 140 mΩ, TO-220
EOL
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AvnetFDP18N20F01042
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IHS

Datasheet10 SeitenVor 12 Jahren
Datasheet0 SeitenVor 0 Jahren

onsemi

Fairchild Semiconductor

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-01-31
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

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Beschreibungen

Beschreibungen von onsemi FDP18N20F, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, UniFETTM, FRFET®, 200 V, 18 A, 140 mΩ, TO-220
onsemi
N-Channel 200 V 145 mOhm Flange Mount Mosfet - TO-220
Future Electronics
Power Field-Effect Transistor, 18A I(D), 200V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Fairchild Semiconductor

Bilder

Augswan
RS
Future Electronics
Rochester Electronics

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