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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2002-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-08-27
LTD Date2013-02-27
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Beschreibungen
Beschreibungen von onsemi FDN372S, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 30V 2.6A 3-Pin SuperSOT T/R
Small Signal Field-Effect Transistor, 2.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
30V N-Channel PowerTrench® SyncFET
MOSFET N-CH 30V 2.6A SUPERSOT3
MOSFET, N, SMD, SSOT; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipat
The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)2.6 A
Current Rating2.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance630 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Elements1
Power Dissipation500 mW
Rds On Max40 mΩ
Resistance40 MΩ
Rise Time5 ns
TerminationSMD/SMT
Turn-Off Delay Time21 ns
Voltage Rating (DC)30 V