onsemi FDMS8023S

Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R
$ 0.525
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Verical
3
FDMS8023S1.664646
Rochester Electronics
2
FDMS8023S26.840
3h
DigiKey
2
FDMS8023SCT-ND1.6331Cut Tape
NewarkFDMS8023S03KTape & Reel
Onlinecomponents.comFDMS8023S0750Bulk

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Master Electronics

Datasheet0 SeitenVor 0 Jahren

IHS

element14 APAC

onsemi

Fairchild Semiconductor

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi FDMS8023S, die von den Distributoren bereitgestellt werden.

Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R
Verical
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
IHS
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Farnell
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
Fairchild Semiconductor

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Newark
Rochester Electronics
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