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Nicht autorisierte Händler
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3-Monats-Trend: -0.31%
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-12-30
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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Trans MOSFET N-CH 30V 16A Automotive AEC-Q101 8-Pin PowerPAK 1212 EP T/R
Beschreibungen
Beschreibungen von onsemi FDMS7580, die von den Distributoren bereitgestellt werden.
N-Channel Power Trench® MOSFET 25V, 7.5mΩ
N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 15A I(D), 25V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2.5W(Ta)，27W(Tc) 20V 3V@ 250µA 20nC@ 10 V 1individualNChannel 25V 7.5mΩ@ 15A,10V 15A，29A 1.19nF@13V QFN SMD mount 6mm*5mm*1.1mm
MOSFET, N CH, 25V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:27W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
• This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vds)25 V
Element ConfigurationSingle
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.19 nF
Max Operating Temperature150 °C
Max Power Dissipation27 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Elements1
Power Dissipation59 W
Rds On Max7.5 mΩ
Rise Time6.8 ns
Threshold Voltage1.6 V
Turn-Off Delay Time17 ns
Turn-On Delay Time7.3 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance-Erklärungen