Beschreibungen von onsemi FDMS2572, die von den Distributoren bereitgestellt werden.
N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ
150V, 4.5A,47 OHM, NCH ULTRAFET TRENCH MOSFET
Trans MOSFET N-CH Si 150V 4.5A 8-Pin Power 56 T/R
onsemi NMOS UltraFET, Vds=150 V, 24 A, PQFN8, , 8
Power Field-Effect Transistor, 27A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fet 150V 47.0 Mohm Mlp Rohs Compliant: Yes
MOSFET SI7430DP N 150V 25A~NH4213227
POWER FIELD-EFFECT TRANSISTOR, 2
MOSFET N-CH 150V 4.5A/27A 8MLP
IC MCU 32BIT 1MB FLASH 100TQFP
UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for low rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
MOSFET, N CH, 150V, 27A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)