onsemi FDMS0310S
$ 0.423
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FDMS0310S | 4.780 | 13h | |||||||||
| Flip Electronics | FDMS0310S | 66.000 | >1wk | |||||||||
| Avnet | FDMS0310S | 0 | 2K | 1d | ||||||||
| Farnell | FDMS0310S. | 0 | 3K | Tape & Reel | 13h | |||||||
| Win Source | WS-FDMS0310S | 3.600 | 65 | 14h |
Bestandsverlauf
3-Monats-Trend: +0.00%
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Lieferkette
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-04-21
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-01-07
LTD Date2022-07-07
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
Verwandte Teile
onsemiFDMS0308AS
2.5W(Ta),50W(Tc) 20V 3V@1mA 47nC@ 10 V 1N 30V 2.8m¦¸@ 24A,10V 24A,49A 3nF@15V QFN 6mm*5mm*1.1mm
onsemiFDMS0309AS
FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56
VishaySIR818DP-T1-GE3
Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8
InfineonIRFH8316TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
VishaySIR464DP-T1-GE3
Single N-Channel 30 V 0.0031 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
Beschreibungen
Beschreibungen von onsemi FDMS0310S, die von den Distributoren bereitgestellt werden.
2.5W(Ta),46W(Tc) 20V 3V@1mA 46nC@ 10V 1N 30V 4m¦¸@ 18A,10V 19A,42A 2.82nF@15V QFN 6mm*5mm*1.1mm
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
N-Channel PowerTrench® SyncFET™ 30V, 42A, 4mΩ
TAPE REEL / PT8 30V/20V Nch PowerTrench SyncFET
MOSFET Gaming/DT/Notebook/NVDC/Server
Power Field-Effect Transistor, 19A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
POWER FIELD-EFFECT TRANSISTOR, 1
The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: +0.00%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)19 A
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.82 nF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max4 mΩ
Rise Time5 ns
Turn-Off Delay Time28 ns
Turn-On Delay Time12 ns
Dimensions
Height1 mm
Length6 mm
Width5 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi FDMS0310S herunter.