onsemi FDMA3027PZ

MOSFET, P-CH, DUAL, 30V/25V, 6MLP; Transistor Polarity: Dual P Channel; Continuou
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
Win SourceWS-FDMA3027PZ9.41090
5h
Worldway ElectronicsFDMA3027PZ21.2607Tape & Reel
4h
AztechFDMA3027PZ520
22h
AnlinkdaFDMA3027PZ44.635
4h
SHENGYU ELECTRONICSFDMA3027PZ14.2061
1d

Datenblätter und Dokumente

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IHS

Datasheet9 SeitenVor 4 Jahren
Datasheet0 SeitenVor 0 Jahren

Future Electronics

onsemi

Newark

Farnell

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Lieferkette

Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-06-15
Lifecycle StatusObsolete (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

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Beschreibungen

Beschreibungen von onsemi FDMA3027PZ, die von den Distributoren bereitgestellt werden.

MOSFET, P-CH, DUAL, 30V/25V, 6MLP; Transistor Polarity:Dual P Channel; Continuou
Newark
Dual P-Channel PowerTrench® MOSFET -30V , -3.3A, 87mΩ
onsemi
Transistor MOSFET Array Dual P-CH 30V 3.3A 6-Pin MicroFET T/R
Avnet
FDMA3027PZ Series -30 V -3.3 A 87 mOhm Dual P-Channel Power Trench Mosfet
Future Electronics
Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
Semicontronic
DC DC Converters 1 (Unlimited) 1 8-SIP Module, 7 Leads Through Hole Isolated Module ITE (Commercial) ECONOLINE RS3 (3W) -40°C~71°C 0.86Lx0.36W x 0.44 H 21.8mmx9.2mmx11.1mm CONV DC/DC 3W SNGL 5V OUT SIP8
Utmel Electronic
MOSFET, P-CH, DUAL, 30V/25V, 6MLP; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:1.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
Farnell
This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S zener has been added to enhance ESD voltage level.
Fairchild Semiconductor

Bilder

RS
Newark
Rochester Electronics

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