onsemi FDI9406-F085
$ 1.556
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDI9406-F085 | 1.200 | 736 | 5h | ||||||||
| Verical | FDI9406_F085 | 400 | 197 | |||||||||
| Rochester Electronics | FDI9406-F085 | 5.600 | 2h | |||||||||
| Flip Electronics | FDI9406-F085 | 1.200 | >1wk | |||||||||
| Microchip USA | FDI9406-F085 | 141 | 300 | Bulk | 21h |
Bestandsverlauf
3-Monats-Trend: +0.00%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-01-29
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Verwandte Teile
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40V, N-Ch, 2.1 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
InfineonIPI120N04S401AKSA1
40V, N-Ch, 1.9 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
STMicroelectronicsSTI270N4F3
STMICROELECTRONICS STI270N4F3 MOSFET Transistor, N Channel, 80 A, 40 V, 2.1 mohm, 10 V, 4 V
STMicroelectronicsSTI400N4F6
N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
STMicroelectronicsSTI360N4F6
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Beschreibungen
Beschreibungen von onsemi FDI9406-F085, die von den Distributoren bereitgestellt werden.
PowerTrench® MOSFET, N-Channel, 40V, 110A, 2.2mΩ
Trans MOSFET N-CH 40V 110A Automotive 3-Pin TO-262AB Tube
RAIL / N-Channel Power Trench MOSFET
Power Field-Effect Transistor, 110A I(D), 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
176W(Tj) 20V 4V@ 250¦ÌA 138nC@ 10 V 1N 40V 2.2m¦¸@ 80A,10V 110A 7.71nF@25V I2PAK,TO-262 10.29mm*4.83mm*7.88mm
FDI9406 - N-CHANNEL POWERTRENCH
110A, 40V, 0.0022OHM, N-CHANNEL
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: +0.00%
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Technische Spezifikationen
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.71 nF
Max Operating Temperature175 °C
Max Power Dissipation176 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation176 W
Rds On Max2.2 mΩ
Rise Time48 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time28 ns
Compliance
Umweltklassifizierung
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen