onsemi FDI038AN06A0

PowerTrench® MOSFET, N-Channel, 60V, 80A, 3.8mΩ
$ 2.441
Obsolete
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DistributorSKUMinPkg
Verical
5
FDI038AN06A0887124
AvnetFDI038AN06A02.400336
2d
Rochester Electronics
2
FDI038AN06A02.609
19h
Flip ElectronicsFDI038AN06A02.400
>1wk
FarnellFDI038AN06A00800Tube
19h

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IHS

Datasheet13 SeitenVor 4 Jahren
Datasheet12 SeitenVor 12 Jahren

Newark

onsemi

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Fairchild Semiconductor

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-07-30
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-04-01
LTD Date2022-10-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Beschreibungen

Beschreibungen von onsemi FDI038AN06A0, die von den Distributoren bereitgestellt werden.

PowerTrench® MOSFET, N-Channel, 60V, 80A, 3.8mΩ
onsemi
Single N-Channel 60 V 0.0078 Ohm 124 nC 310 W Through Hole Mosfet TO-262
Future Electronics
TO262, SINGLE, NCH, 60V, 0.0038 ohm PowerTrench MOSFET
Master Electronics
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
IHS
Mosfet, N-Ch, 60V, 80A, I2Pak; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. Of Pins:3Pinsrohs Compliant: Yes |Onsemi FDI038AN06A0
Newark

Bilder

Future Electronics
Rochester Electronics

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