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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-08-11
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
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MOSFET N-CH 60V 120A TO262-3 / N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3
Beschreibungen
Beschreibungen von onsemi FDI030N06, die von den Distributoren bereitgestellt werden.
PowerTrench® MOSFET, N-Channel, 60V, 193A, 3.2mΩ
Trans MOSFET N-CH Si 60V 193A 3-Pin(3+Tab) I2PAK Tube
FET 60V 3.2 MOHM TO220 ROHS COMPLIANT: YES
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
231W(Tc) 20V 4.5V@ 250¦ÌA 151nC@ 10V 1N 60V 3.2m¦¸@ 75A,10V 120A 9.815nF@25V I2PAK,TO-262 10.29mm*4.83mm*7.88mm
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -20.89%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.387 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.815 nF
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation231 W
Rds On Max3.2 mΩ
Rise Time178 ns
Turn-Off Delay Time54 ns
Turn-On Delay Time39 ns
Dimensions
Height4.83 mm
Length10.29 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen