onsemi FDD2670

N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ
$ 1.027
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Verical
2
FDD26702.490284
Rochester Electronics
2
FDD26704.303
23h
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FDD2670CT-ND1.1031Cut Tape
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Datenblätter und Dokumente

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IHS

Datasheet6 SeitenVor 4 Jahren
Datasheet0 SeitenVor 0 Jahren

Master Electronics

element14 APAC

onsemi

Farnell

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi FDD2670, die von den Distributoren bereitgestellt werden.

N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ
onsemi
Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70mW; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.6A; Package / Case:DPAK; Power Dissipation Pd:70mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
element14 APAC
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Fairchild Semiconductor

Bilder

Newark
Farnell
Newark
iiiC
iiiC
Rochester Electronics

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