onsemi FCPF20N60T

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F
$ 2.666
Obsolete
Datenblatt
Herstellerseite

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Flip Electronics
FCPF20N60T
1.000
USD
2,040
2,040
2,040
2,040
2,040
1h
Newark
FCPF20N60T
0
1K
USD
2,720
2,500
Avnet
FCPF20N60T
0
1K
USD
2,666
2,417
16h
Win Source
WS-FCPF20N60T
20
21
USD
2,138
1,793
1,793
11h
Worldway Electronics
FCPF20N60T
24.588
7
Tube
USD
0,685
0,672
0,646
0,633
11h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi FCPF20N60T herunter.

IHS

Datasheet10 SeitenVor 21 Jahren

Master Electronics

onsemi

Mouser

Fairchild Semiconductor

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-02-04
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)

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Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
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N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-220
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N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
Details
InfineonSPA20N60C3XKSA1
TRANSISTOR, MOSFET, N-CHANNEL, 650V, 20.7A, 0.19 OHM, TO-220FP, COOLMOS POWER
Details

Beschreibungen

Beschreibungen von onsemi FCPF20N60T, die von den Distributoren bereitgestellt werden.

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F
onsemi
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Rail
Verical
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
39W(Tc) 30V 5V@ 250µA 98nC@ 10 V 1individualNChannel 600V 190mΩ@ 10A,10V 20A 3.08nF@25V TO-220F-3 Through hole mounting 10.67mm*4.7mm*16.3mm
UnikeyIC
MOSFET, N, TO-220F; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-220F; Current, Idm pulse:60A; Energy, avalanche repetitive Ear:20.8mJ; Pin configuration:1(G), 2(D), 3(S); Power, Pd:39W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs max:5V
Farnell
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Fairchild Semiconductor

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  • ON Semiconductor
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  • ONSEMIC
  • ON Semicondu
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  • ON SEMICOND
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
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  • ON SEMICONDUCTOR CORP
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
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  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd