onsemi FCPF190N60

N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F
$ 1.754
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Avnet
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FCPF190N6080050
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Verical
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FCPF190N60366172
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Rochester Electronics
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FCPF190N60366
11h

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onsemi

Fairchild Semiconductor

Newark

Farnell

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-11-16
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi FCPF190N60, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F
onsemi
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Rail
Verical
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Semicontronic
MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
element14 APAC
SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.
Fairchild Semiconductor

Bilder

RS
Electro Sonic
Farnell
Rochester Electronics

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  • FCPF190N60.