onsemi FCD620N60ZF

N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 7.3 A, 620 mΩ, DPAK
$ 1.363
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DigiKey
3
FCD620N60ZFCT-ND2.5001Cut Tape
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IHS

Datasheet9 SeitenVor 12 Jahren

Master Electronics

onsemi

Future Electronics

Fairchild Semiconductor

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-08-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi FCD620N60ZF, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 7.3 A, 620 mΩ, DPAK
onsemi
N-Channel 600 V 620 mOhm 36 nC Surface Mount Mosfet - TO-252
Future Electronics
SuperFET2 620mohm / 600V, FRFET - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Newark
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.62ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Fairchild Semiconductor

Bilder

Augswan
RS
TME
LZChips
Rochester Electronics

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