onsemi FCB20N60TM
$ 2.61
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | FCB20N60TMCT-ND | 1.290 | 1 | Cut Tape | ||||||||
| Flip Electronics | FCB20N60TM | 7.200 | 6d | |||||||||
| Newark | FCB20N60TM | 0 | 800 | Cut Tape | ||||||||
| Onlinecomponents.com | FCB20N60TM | 0 | 10 | Bulk | ||||||||
| Avnet | FCB20N60TM | 0 | 800 | 13h |
Bestandsverlauf
3-Monats-Trend: -25.90%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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CAD-Modelle
Laden Sie onsemi FCB20N60TM Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.
| QUELLE | eCAD | mCAD | DATEIEN |
|---|---|---|---|
 EE Concierge | SymbolFußabdruck | ||
 SnapEDA | Fußabdruck | Herunterladen |
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Price @ 1000
$ 2.61
$ 2.625
$ 2.625
Stock
240,031
205,328
205,328
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
20 A
20 A
20 A
Threshold Voltage
5 V
-
-
Rds On Max
190 mΩ
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
208 W
208 W
208 W
Input Capacitance
3.08 nF
3.08 nF
3.08 nF
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-02-04
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
STMicroelectronicsSTB25NM60ND
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
STMicroelectronicsSTB23NM60ND
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK
VishaySIHB22N60E-GE3
MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTB24N60M2
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package
VishaySIHB24N65E-GE3
E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK
Beschreibungen
Beschreibungen von onsemi FCB20N60TM, die von den Distributoren bereitgestellt werden.
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK
MOSFET N-CH 600V 20A D2PAK / Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
Power MOSFET, N Channel, 600 V, 20 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount
FCB20N60 Series 600 V 20 A 190 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -25.90%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.08 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation208 W
Rds On Max190 mΩ
Resistance190 mΩ
Rise Time140 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time230 ns
Turn-On Delay Time62 ns
Voltage Rating (DC)600 V
Dimensions
Height5.08 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen