onsemi 2N6517TA
$ 0.079
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -8.11%
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Stock
508,016
604,310
604,310
Authorized Distributors
6
5
5
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92
TO-92-3
TO-92-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
350 V
350 V
350 V
Max Collector Current
500 mA
500 mA
500 mA
Transition Frequency
40 MHz
40 MHz
40 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
hFE Min
15
15
15
Power Dissipation
625 mW
625 mW
625 mW
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
NXP SemiconductorsPHE13003A,126
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin
Beschreibungen
Beschreibungen von onsemi 2N6517TA, die von den Distributoren bereitgestellt werden.
TRANSISTOR,BJT,NPN,350V V(BR)CEO,500MA I; TRANSISTOR,BJT,NPN,350V V(BR)CEO,500MA I(C),TO-92
2N6517 Series 350 V 500 mA NPN Through Hole Epitaxial Silicon Transistor-TO-92-3
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 50mA 10V 50nA ICBO 625mW 200MHz
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
1V@ 5mA,50mA NPN 625mW 6V 50nA 350V 350V 500mA TO-92-3 Through hole mounting 4.7mm*3.93mm*4.7mm
TO-92-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 350V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 625mW; DC Collector Current: -; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -8.11%
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0 Modelle verfügbar
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Technische Spezifikationen
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)350 V
Collector Emitter Breakdown Voltage350 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)350 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency200 MHz
Gain Bandwidth Product40 MHz
hFE Min15
Max Breakdown Voltage350 V
Max Collector Current500 mA
Max Frequency200 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency40 MHz
Voltage Rating (DC)350 V
Dimensions
Height8.77 mm
Length4.58 mm
Width3.86 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance-Erklärungen