onsemi 2N5210TFR
$ 0.023
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Datenblätter und Dokumente
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Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 0.023
$ 0.03
$ 0.03
Stock
53,669
311,764
311,764
Authorized Distributors
1
2
2
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
TO-92-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
30 MHz
30 MHz
30 MHz
Collector Emitter Saturation Voltage
700 mV
700 mV
700 mV
hFE Min
250
250
250
Power Dissipation
625 mW
625 mW
625 mW
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2019-04-18
LTD Date2019-10-18
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
Verwandte Teile
onsemiBC547AZL1G
Power Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, Plastic/Epoxy, 3 Pin
onsemiFJN3304RBU
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
Beschreibungen
Beschreibungen von onsemi 2N5210TFR, die von den Distributoren bereitgestellt werden.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 100muA 5V 50nA ICBO 625mW 30MHz
2N5210 Series 50 V CE Breakdown 0.1 A NPN General Purpose Amplifier - TO-92
Transistor GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R
TRANSISTOR NPN 100mA 50V hFE=250~600 TO-92
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technische Spezifikationen
Physical
Case/PackageTO-92-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4.5 V
Frequency30 MHz
Gain Bandwidth Product30 MHz
hFE Min250
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation620 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency30 MHz
Voltage Rating (DC)50 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Datenblätter und Dokumente
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Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen