NXP Semiconductors PBSS8110Y
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Beschreibungen
Beschreibungen von NXP Semiconductors PBSS8110Y, die von den Distributoren bereitgestellt werden.
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
TRANSISTOR, NPN, SOT-363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:290mW; DC Collector Current:1A; DC Current Gain hFE:150hFE; Transistor Case Styl
TRANSISTOR, NPN, SOT-363; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Current Ic Continuous a Max:1A; Voltage, Vce Sat Max:40mV; Power Dissipation:290mW; Min Hfe:80; ft, Typ:100MHz; ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 290mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 40mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1A; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 430mW; Power Dissipation per device Max: 290mW; SMD Marking: 81; Voltage Vcbo: 120V
Aliasnamen des Herstellers
NXP Semiconductors verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. NXP Semiconductors ist möglicherweise auch unter den folgenden Namen bekannt:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Technische Spezifikationen
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)100 V
Emitter Base Voltage (VEBO)5 V
hFE Min80
Max Collector Current1 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation290 mW
Transition Frequency100 MHz
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen