NXP Semiconductors MRF6V2010NBR1
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Worldway Electronics | MRF6V2010NBR1 | 19.620 | 7 | Tape & Reel | 15h | |||||||
| Fmall Co., Limited | MRF6V2010NBR1 | 45.120 | >1wk | |||||||||
| Chipsmall Limited | MRF6V2010NBR1 | 47.400 | 1 | 5h | ||||||||
| Run Hong Electronics | MRF6V2010NBR1 | 5.084 | 22h | |||||||||
| Fly-Wing Technology | MRF6V2010NBR1 | 985 | 3d |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2007-02-26
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2020-10-14
LTD Date2021-04-14
Verwandte Teile
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RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.5 @ 512 MHz, 50 V, LDMOS, SOT1732
NXP SemiconductorsMMRF1304NR1
Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V/ REEL RoHS Compliant: Yes
NXP SemiconductorsMW6S010GNR1
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1731
Beschreibungen
Beschreibungen von NXP Semiconductors MRF6V2010NBR1, die von den Distributoren bereitgestellt werden.
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
NXP Semiconductors SCT
23.9 dB Compliant Screw, Surface Mount 1.196095 g 220 MHz Contains Lead Tape and Reel TO-270-2
Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes
Aliasnamen des Herstellers
NXP Semiconductors verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. NXP Semiconductors ist möglicherweise auch unter den folgenden Namen bekannt:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Technische Spezifikationen
Physical
Case/PackageTO-270-2
Contact PlatingTin
MountScrew, Surface Mount
Number of Terminals2
Weight1.196095 g
Technical
Current Rating10 µA
Drain to Source Breakdown Voltage110 V
Drain to Source Voltage (Vdss)110 V
Frequency220 MHz
Gain22.5 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency450 MHz
Max Operating Temperature225 °C
Max Output Power10 W
Min Breakdown Voltage110 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power10 W
PackagingTape and Reel
Test Current30 mA
Test Voltage50 V
Voltage Rating110 V
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Halogen FreeNot Halogen Free
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen