NXP Semiconductors BC846B
Production
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Autorisierte Distributoren
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Nicht autorisierte Händler
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1988-01-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2004-06-30
Beschreibungen
Beschreibungen von NXP Semiconductors BC846B, die von den Distributoren bereitgestellt werden.
65V 200mW 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
65 V, 100 MILLI AMP NPN GENERAL-PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 65V 0.1A 250mW Automotive 3-Pin TO-236AB
400mV@ 5mA,100mA NPN 250mW 6V 15nA 80V 65V 100mA SOT-23 1.1mm
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SMD, 3 PIN, BIP General Purpose Small Signal
TRANSISTOR, NPN, SOT-23; Transistor type:Small Signal General Purpose; Voltage, Vceo:65V; Current, Ic continuous a max:100mA; hfe, min:200; ft, typ:300MHz; Case style:SOT-23; Current, Ic hFE:2mA; Current, Ic max:100mA; Device RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC846B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:1B; Termination Type:SMD; Voltage Vcbo:80V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 290 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
Aliasnamen des Herstellers
NXP Semiconductors verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. NXP Semiconductors ist möglicherweise auch unter den folgenden Namen bekannt:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Technische Spezifikationen
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)65 V
Current100 mA
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product100 MHz
hFE Min200
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage65 V
Dimensions
Height1.1 mm