Nexperia PUMD9,115
$ 0.048
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Min.
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3-Monats-Trend: -100%
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Price @ 1000
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Stock
15,420,427
1,371,665
1,371,665
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-363
TSSOP
TSSOP
Polarity
NPN, PNP
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
100 mV
-
-
hFE Min
100
100
100
Power Dissipation
300 mW
-
-
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-04-07
Lifecycle StatusProduction (Last Updated: 4 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 4 years ago)
Beschreibungen
Beschreibungen von Nexperia PUMD9,115, die von den Distributoren bereitgestellt werden.
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD9 Series 50 V 100 mA Surface Mount NPN/PNP Digital Transistor - SOT-363
Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin TSSOP T/R
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Digital transistors; NEXPERIA; PUMD9, 115; 6; NPN, PNP; 50 V; 100 mA
Transistor NPN/PNP 50V 10K 47K SOT363
Nexperia NPN/PNPdigital transistor, UMTencapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
Transistor Polarity = NPN / Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 100 / Power Dissipation (Pd) mW = 200 / Typical Input Resistor kOhm = 10 / Typical Resistor Ratio kOhm = 4.7 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 10 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 100 / Operating Frequency MHz = 230
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMD9 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 100mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Full Power Rating Temperature: 25°C; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 300mW; Resistance R1: 10kohm; Resistance R1 PNP: 10kohm; Resistance R2: 47kohm; Transistor Case Style: SOT-363
Aliasnamen des Herstellers
Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Bestandsverlauf
3-Monats-Trend: -100%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight453.59237 mg
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage100 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
hFE Min100
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements2
Operating Supply Voltage50 V
PolarityNPN, PNP
Power Dissipation300 mW
Schedule B8541210080
Zener Voltage2.7 V
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen