Nexperia PIMT1,115
$ 0.089
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -16.34%
CAD-Modelle
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Alternative Teile
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Lieferkette
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-12-24
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
Verwandte Teile
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NXP SemiconductorsPMEM4020ND,115
Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Beschreibungen
Beschreibungen von Nexperia PIMT1,115, die von den Distributoren bereitgestellt werden.
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
PNP general purpose double transistor
Trans GP BJT PNP 40V 0.1A 6-Pin TSOP T/R
100 mA 40 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:600mW; DC Collector Current:-100mA ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Bestandsverlauf
3-Monats-Trend: -16.34%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageTSOP
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min120
Max Breakdown Voltage40 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements2
PolarityPNP
Power Dissipation600 mW
Transition Frequency100 MHz
Dimensions
Height1 mm
Length3.1 mm
Width1.7 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen