Nexperia BC849CW,115
$ 0.037
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Nexperia BC849CW,115 herunter.
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
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Stock
3,247,677
5,447,272
5,447,272
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-323
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
30 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
600 mV
hFE Min
420
420
420
Power Dissipation
200 mW
300 mW
300 mW
Lieferkette
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
Verwandte Teile
Diodes Inc.BC848CW-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.BC846BW-7-F
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 200 mW, SOT-323, Surface Mount
Diodes Inc.BC847CW-7-F
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount
ROHMDTC144TUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJX3007RTF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJX3001RTF
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323
Beschreibungen
Beschreibungen von Nexperia BC849CW,115, die von den Distributoren bereitgestellt werden.
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 30V 0.1A 3-Pin SC-70 T/R
BC849CW Series 30 V 100 mA NPN Surface Mount Silicon Transistor - SOT-323
30V 200mW 100mA 420@2mA5V 100MHz 600mV@100mA5mA NPN +150¡Í@(Tj) SOT-323 Bipolar Transistors - BJT ROHS
100 mA 30 V NPN Si SMALL SIGNAL TRANSISTOR
TRANSISTOR NPN 30V 100MA SOT323
NPN transistor,BC849CW 0.1A Ic 5Vce
RS APAC
NPN general purpose transistors
Nexperia NPN, UMT, , 100 mA, -30 V
DIODE, SCHOTTKY, SOT-323, FULL REEL
NOW NEXPERIA BC849CW - SMALL SIG
Aliasnamen des Herstellers
Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Technische Spezifikationen
Physical
Case/PackageSOT-323
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)30 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min420
Max Breakdown Voltage30 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency100 MHz
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Nexperia BC849CW,115 herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen