Infineon SPW15N60CFDFKSA1
$ 1.65
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | SPW15N60CFDFKSA1 | 720 | 15h | |||||||||
| Microchip USA | SPW15N60CFDFKSA1 | 142 | 600 | Tube | 10h | |||||||
| Verical | SPW15N60CFDFKSA1 | 240 | 164 | |||||||||
| Win Source | WS-SPW15N60CFD | 9.000 | 20 | 17h | ||||||||
| Worldway Electronics | SPW15N60CFDFKSA1 | 12.790 | 7 | Tube | 15h |
Bestandsverlauf
3-Monats-Trend: -14.29%
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Datenblätter und Dokumente
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
Verwandte Teile
Beschreibungen
Beschreibungen von Infineon SPW15N60CFDFKSA1, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 600V 13.4A 3-Pin(3+Tab) TO-247
Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies, PG-TO247-3, RoHS
Infineon SCT
MOSFET, N, TO-247; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:13.4A; On State Resistance:0.33ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247; ;RoHS Compliant: Yes
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:13.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):330mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:13.4A; Package / Case:TO-247; Power Dissipation Pd:156W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -14.29%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
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Technische Spezifikationen
Physical
Case/PackageTO-247-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13.4 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance330 mΩ
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage650 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.82 nF
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance330 mΩ
Package Quantity240
Power Dissipation156 W
Rds On Max330 mΩ
Rise Time24 ns
TerminationThrough Hole
Turn-Off Delay Time47 ns
Turn-On Delay Time43 ns
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon SPW15N60CFDFKSA1 herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen