Infineon IRLR8729PBF
$ 0.435
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRLR8729TRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
InfineonIRLR8729TRLPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Diodes Inc.DMN3010LK3-13
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3010LK3-13
Beschreibungen
Beschreibungen von Infineon IRLR8729PBF, die von den Distributoren bereitgestellt werden.
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant
MOSFET, N-CH 30V 58A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:55W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Id Max:58A; Package / Case:D-PAK; Power Dissipation Pd:55W; Power Dissipation Pd:55W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: Restocked
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.35 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance8.9 mΩ
Package Quantity3000
Power Dissipation55 W
Rds On Max8.9 mΩ
Recovery Time24 ns
Resistance8.9 MΩ
Rise Time47 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time10 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen