Infineon IRLR8103VPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
InfineonIRFR3709ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5.2Milliohms;ID 86A;D-Pak (TO-252AA);PD 79W
InfineonIRFR3709ZTRLPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
InfineonIRFR3709ZTRRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Beschreibungen
Beschreibungen von Infineon IRLR8103VPBF, die von den Distributoren bereitgestellt werden.
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
MOSFET, 30V, 89A, 9 MOHM, 27 NC QG, LOGIC LEVEL, D-PAK
MOSFET Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, 30V, 89A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:91A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:115W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:89A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:9mohm; Package / Case:DPAK; Power Dissipation Pd:115W; Power Dissipation Pd:115W; Pulse Current Idm:363A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)91 A
Current Rating89 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.672 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation115 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance9 mΩ
Package Quantity3000
Power Dissipation89 W
Rds On Max9 mΩ
Resistance9 mΩ
Rise Time9 ns
Threshold Voltage3 V
Turn-Off Delay Time24 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)30 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen