Infineon IRFR3709ZTRLPBF
$ 0.4
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFR3709ZTRLPBF | 3.000 | 22h | |||||||||
| RS (Formerly Allied Electronics) | IRFR3709ZTRLPBF | 0 | 3K | Bulk | 14h | |||||||
| Farnell | IRFR3709ZTRLPBF | 0 | 5 | Cut Tape | 7h | |||||||
| Mouser | 942-IRFR3709ZTRLPBF | 136 | 1 | Tape & Reel | ||||||||
| Microchip USA | IRFR3709ZTRLPBF | 1.817 | 600 | Tray | 14h |
Bestandsverlauf
3-Monats-Trend: -14.12%
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
Verwandte Teile
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Beschreibungen
Beschreibungen von Infineon IRFR3709ZTRLPBF, die von den Distributoren bereitgestellt werden.
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
N CHANNEL MOSFET, 30V, 86A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -14.12%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating86 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.33 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6.5 mΩ
Package Quantity3000
Power Dissipation79 W
Rds On Max6.5 mΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time12 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen